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Infineon IPW Type N-Channel MOSFET, 50 A, 650 V, 3-Pin TO-247 IPW65R041CFD7XKSA1

RS 제품 번호:: 258-3915
제조사 부품 번호:: IPW65R041CFD7XKSA1
제조업체:: Infineon

Infineon IPW Type N-Channel MOSFET, 50 A, 650 V, 3-Pin TO-247 IPW65R041CFD7XKSA1

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Subtotal (1 unit)*

₩12,896.80

재고있음

90 개 단위 배송 준비 완료

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수량	한팩당
1 - 1	₩12,896.80
2 - 4	₩11,449.20
5 - 9	₩9,475.20
10 - 14	₩9,268.40
15 +	₩9,099.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 258-3915
제조사 부품 번호:: IPW65R041CFD7XKSA1
제조업체:: Infineon

참조 문서

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	IPW
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	41mΩ
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	102nC
	Maximum Power Dissipation Pd	227W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series IPW
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 41mΩ
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 102nC
	Maximum Power Dissipation Pd 227W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPW65R041CFD7XKSA1

The Infineon 650V CoolMOS CFD7 super junction MOSFET TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Ultrafast body diode and very low Qrr

650V breakdown voltage

Significantly reduced switching losses compared to competition

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

Infineon IPW Type N-Channel MOSFET, 50 A, 650 V, 3-Pin TO-247 IPW65R041CFD7XKSA1

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