제조사부품번호

Infineon IPW Type N-Channel MOSFET, 69 A, 650 V, 3-Pin PG-TO-247

RS 제품 번호:: 258-3910
제조사 부품 번호:: IPW65R029CFD7XKSA1
제조업체:: Infineon

Infineon IPW Type N-Channel MOSFET, 69 A, 650 V, 3-Pin PG-TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩333,944.40

일시적 품절

2026년 5월 25일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 30	₩11,131.48	₩333,927.48
60 - 60	₩10,796.84	₩323,905.20
90 +	₩10,473.48	₩314,187.48

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 258-3910
제조사 부품 번호:: IPW65R029CFD7XKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	69A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-TO-247
	Series	IPW
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	29mΩ
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	305W
	Typical Gate Charge Qg @ Vgs	145nC
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 69A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-TO-247
	Series IPW
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 29mΩ
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 305W
	Typical Gate Charge Qg @ Vgs 145nC
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPW65R029CFD7XKSA1

The Infineon 650V CoolMOS CFD7 super junction MOSFET in TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

650V breakdown voltage

Significantly reduced switching losses compared to competition

Lowest RDS(on) dependency over temperature

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

Infineon IPW Type N-Channel MOSFET, 69 A, 650 V, 3-Pin PG-TO-247

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