Infineon CoolMOS Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-247 IPW60R170CFD7XKSA1
- RS 제품 번호:
- 222-4723
- 제조사 부품 번호:
- IPW60R170CFD7XKSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩31,687.50
재고있음
- 추가로 2026년 5월 11일 부터 10 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩6,337.50 | ₩31,687.50 |
| 10 - 95 | ₩6,224.40 | ₩31,122.00 |
| 100 - 245 | ₩6,111.30 | ₩30,556.50 |
| 250 - 495 | ₩6,006.00 | ₩30,030.00 |
| 500 + | ₩5,892.90 | ₩29,464.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4723
- 제조사 부품 번호:
- IPW60R170CFD7XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 75W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.21mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 75W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Operating Temperature 150°C | ||
Height 5.21mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
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