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Infineon IPD Type P-Channel MOSFET, -73 A, -40 V Enhancement, 3-Pin TO-252 IPD70P04P409ATMA2

RS 제품 번호:: 258-3861
제조사 부품 번호:: IPD70P04P409ATMA2
제조업체:: Infineon

Infineon IPD Type P-Channel MOSFET, -73 A, -40 V Enhancement, 3-Pin TO-252 IPD70P04P409ATMA2

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Subtotal (1 reel of 2500 units)*

₩2,470,000.00

일시적 품절

2027년 1월 06일 부터 배송

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수량	한팩당	릴당*
2500 - 2500	₩988.00	₩2,470,000.00
5000 - 5000	₩968.00	₩2,420,500.00
7500 +	₩948.00	₩2,372,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 258-3861
제조사 부품 번호:: IPD70P04P409ATMA2
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-73A
	Maximum Drain Source Voltage Vds	-40V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	8.9mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	54nC
	Maximum Power Dissipation Pd	75W
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	DIN IEC 68-1, RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -73A
	Maximum Drain Source Voltage Vds -40V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 8.9mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 54nC
	Maximum Power Dissipation Pd 75W
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -1V
	Maximum Operating Temperature 175°C
	Standards/Approvals DIN IEC 68-1, RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD70P04P409ATMA2

Infineon IPD Series MOSFET, 75W Power Dissipation -40V Drain-Source Voltage - IPD70P04P409ATMA2

This MOSFET is a P‑channel enhancement‑mode power transistor designed for surface‑mount applications in demanding electrical environments. It operates across a wide temperature span from -55°C to 175°C and is suitable where high current handling and Compact mounting are required. The device complies with RoHS and meets automotive test standard AEC‑Q101 for use in automotive‑grade electronics.

Features and Benefits:

• 8.9mΩ Rds(on) reduces conduction losses and improves efficiency
• -73A continuous drain current supports heavy current demands
• 75W power dissipation allows sustained power handling
• 54 nC typical gate charge enables predictable switching behaviour
• TO‑252 package facilitates Compact surface mounting

Applications

• Suitable for high‑current load switching in automotive systems
• Ideal for reverse‑polarity protection in power rails
• Used with power‑management circuits in vehicular electronics
• Can be used for synchronous control in DC power stages
• Suitable for thermally stable designs across wide temperature ranges

What voltage rating applies between drain and source?

The device is rated for -40V maximum drain‑to‑source voltage.

What gate voltage limits must be observed to avoid damage?

Gate‑to‑source voltage must not exceed 20V to prevent gate stress.

How does the package affect PCB assembly?

The TO‑252 surface‑mount form factor supports standard solder reflow processes and Compact board layouts.

What thermal extremes can the device tolerate during operation?

It is specified for operation from -55°C up to 175°C for wide‑range thermal resilience.