Infineon iPB Type N-Channel MOSFET, 260 A, 80 V P, 7-Pin TO-263 IPB015N08N5ATMA1
- RS 제품 번호:
- 258-3784
- 제조사 부품 번호:
- IPB015N08N5ATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩8,140.40
재고있음
- 1,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩8,140.40 |
| 10 - 99 | ₩7,369.60 |
| 100 - 249 | ₩6,091.20 |
| 250 - 499 | ₩5,301.60 |
| 500 + | ₩4,982.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-3784
- 제조사 부품 번호:
- IPB015N08N5ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 260A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | P | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 0.86V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 260A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode P | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 0.86V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 80V industrial power MOSFET offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
관련된 링크들
- Infineon iPB Type N-Channel MOSFET, 260 A, 80 V P, 7-Pin TO-263
- Infineon iPB Type N-Channel MOSFET, 166 A, 80 V N, 3-Pin TO-263 IPB024N08N5ATMA1
- Infineon iPB Type N-Channel MOSFET, 90 A Enhancement TO-263 IPB90N06S404ATMA2
- Infineon iPB Type N-Channel MOSFET, 120 A Enhancement TO-263 IPB120N06S403ATMA2
- Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263 IPB180N10S402ATMA1
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V P, 3-Pin TO-263 IPB020N08N5ATMA1
- Infineon iPB Type N-Channel MOSFET, 166 A, 100 V N, 7-Pin TO-263 IPB032N10N5ATMA1
- Infineon iPB Type N-Channel MOSFET, 136 A, 150 V N, 7-Pin TO-263 IPB060N15N5ATMA1
