Infineon iPB N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB048N15N5ATMA1

RS 제품 번호:: 242-5819
제조사 부품 번호:: IPB048N15N5ATMA1
제조업체:: Infineon

Infineon iPB N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB048N15N5ATMA1

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₩11,560.00

추가로 2026년 10월 05일 부터 1,477 개 단위 배송

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RS 제품 번호:: 242-5819
제조사 부품 번호:: IPB048N15N5ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	273A
	Maximum Drain Source Voltage Vds	100V
	Series	iPB
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 273A
	Maximum Drain Source Voltage Vds 100V
	Series iPB
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPB048N15N5ATMA1

Infineon iPB Series MOSFET, 100V Drain Source Voltage, 273A Continuous Drain Current - IPB048N15N5ATMA1

This MOSFET is a high-current N-channel switching device designed for surface-mount power applications where efficient conduction and thermal resilience are required. It operates across an extended temperature range and is intended for use in demanding power conversion and motor-drive environments, providing a Compact solution in a TO-263 package for board-mounted assemblies.

Features and Benefits:

• Low Rds(on) 1.7 mΩ reduces conduction losses and improves efficiency
• High continuous drain current 273 A supports heavy-current loads
• Maximum Vds 100 V enables robust voltage margin in switching stages
• Power dissipation 81 W allows sustained thermal loading in tight layouts
• Typical gate charge 80 nC balances switching speed and drive requirements
• Gate-source rating 20 V permits substantial drive headroom for control

Applications

• Suitable for power-conversion stages in industrial inverters
• Ideal for high-current motor-drive circuits on PCBs
• Used with synchronous-rectification topologies in power supplies
• Can be used for battery-management systems requiring high current
• Recommended for compact, board-mounted switch modules requiring surface-mount components

What temperature range can it reliably operate within?

It is rated to operate from −55 °C up to 175 °C, accommodating high-temperature environments.

How does the package influence thermal performance?

The TO-263 surface-mount package provides a low-thermal-resistance path to the board for effective heat dissipation during high-power operation.

What gate-drive considerations should be observed?

The device accepts up to 20 V on the gate relative to source and has an 80 nC typical total gate charge, so driver capability must match switching frequency and desired transition times.

Is this suitable for automotive qualification?

It is not specified as an automotive-grade device and therefore should not be assumed compliant with automotive-specific standards.