Infineon iPB N-Channel MOSFET, 273 A, 100 V N, 7-Pin TO-263 IPB017N10N5ATMA1

RS 제품 번호:: 242-5817
제조사 부품 번호:: IPB017N10N5ATMA1
제조업체:: Infineon

Infineon iPB N-Channel MOSFET, 273 A, 100 V N, 7-Pin TO-263 IPB017N10N5ATMA1

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 unit)*

₩10,420.00

추가로 2026년 10월 05일 부터 1,753 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 - 9	₩10,420.00
10 - 99	₩10,180.00
100 - 249	₩9,940.00
250 - 499	₩9,700.00
500 +	₩9,480.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 242-5817
제조사 부품 번호:: IPB017N10N5ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	273A
	Maximum Drain Source Voltage Vds	100V
	Series	iPB
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	81W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 273A
	Maximum Drain Source Voltage Vds 100V
	Series iPB
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 81W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPB017N10N5ATMA1

Infineon iPB Series MOSFET, 100V Maximum Drain Source Voltage, 273A Maximum Continuous Drain Current - IPB017N10N5ATMA1

This MOSFET is a high-current N-channel switching device designed for surface-mount power applications. It operates across a wide temperature span and is intended for demanding industrial and power-conversion environments where robust current handling and thermal resilience are required.

Features and Benefits:

• Low on-resistance delivers minimal conduction losses and improved efficiency
• High continuous drain current enables sustained heavy-load operation
• 100V drain rating supports common intermediate-voltage topologies
• 81W power dissipation allows higher power throughput in Compact packages
• 80nC typical gate charge supports responsive switching in converters
• 20V gate rating permits broad gate-drive voltage flexibility

Applications

• Suitable for high-current DC-DC power converters
• Ideal for synchronous rectification in power supplies
• Used with motor-drive half-bridge stages
• Can be used for server and telecoms power rails
• Suitable for battery-management and inverter systems

What thermal extremes can this device withstand?

It is specified to operate from -55°C up to 175°C supporting wide-range industrial temperature demands.

How does the package type influence mounting and heat management?

The TO-263 surface-mount format enables direct PCB mounting with low thermal resistance paths for heatsinking arrangements.

What gate-drive considerations should be observed for switching performance?

With an 80nC typical gate charge and a 20V maximum gate rating, gate drivers must supply sufficient current while respecting the Vgs limit to achieve fast transitions.

What channel characteristics affect conduction and switching losses?

The device uses an N-channel architecture with a very low drain-source resistance which reduces conduction losses while maintaining high current capability.

Is this device intended for automotive qualification?

The part is not classified as automotive standard-compliant but meets RoHS environmental requirements.