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Infineon HEXFET N-Channel MOSFET, 22 A, 20 V Enhancement PQFN IRLHS6242TRPBF

RS 제품 번호:: 257-9444
제조사 부품 번호:: IRLHS6242TRPBF
제조업체:: Infineon

Infineon HEXFET N-Channel MOSFET, 22 A, 20 V Enhancement PQFN IRLHS6242TRPBF

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Subtotal (1 reel of 4000 units)*

₩1,296,000.00

일시적 품절

2027년 5월 31일 부터 배송

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RS 제품 번호:: 257-9444
제조사 부품 번호:: IRLHS6242TRPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	22A
	Maximum Drain Source Voltage Vds	20V
	Series	HEXFET
	Package Type	PQFN
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	11.70mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	12V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	14nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	9.6W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 22A
	Maximum Drain Source Voltage Vds 20V
	Series HEXFET
	Package Type PQFN
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 11.70mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 12V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 14nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 9.6W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRLHS6242TRPBF

Infineon HEXFET Series MOSFET, 20V Maximum Drain‑Source Voltage, 22A Maximum Continuous Drain Current - IRLHS6242TRPBF

This MOSFET is a through‑hole enhancement‑mode N‑channel device designed for switching and power‑control tasks. It operates across a wide ambient range and is suited to environments where Compact packaging and appreciable continuous current are required. Key electrical limits and thermal characteristics support integration into assemblies that demand controlled gate drive and moderate power dissipation.

Features and Benefits:

• Low conduction resistance delivers reduced conduction losses
• High continuous current handles heavier load currents
• Moderate gate charge enables reasonably quick switching
• Wide operating temperature range supports harsh environments
• Controlled gate voltage rating protects against drive overvoltage

Applications

• Suitable for mid‑voltage DC switching and load control
• Ideal for power‑stage components in industrial supplies
• Used with motor‑drive circuits requiring 22A capability
• Can be used for battery management and protection systems
• Appropriate for Compact power converters in PQFN packages

What thermal performance should be expected under load?

It dissipates up to 9.6W, so thermal management such as heatsinking or airflow is required to maintain junction temperatures.

What gate‑drive limits must be observed during design?

The gate‑source voltage must not exceed 12V to avoid overvoltage stress on the input‑gate structure.

How does the device behave across temperature extremes?

It is specified to operate from -55°C to 150°C, allowing use in applications with wide ambient temperature swings.

What are the switching characteristics relevant to transient design?

The typical total gate charge is 14 nC at rated gate‑drive conditions, informing gate‑driver sizing and switching‑loss calculations.

Is this device compliant with common environmental directives?

It meets RoHS criteria, indicating the absence of restricted hazardous substances in its construction.