Infineon HEXFET Type N-Channel MOSFET, 100 A, 25 V Enhancement, 4-Pin PQFN IRFH5250TRPBF

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Subtotal (1 pack of 10 units)*

₩21,625.50

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한팩당
한팩당*
10 - 10₩2,162.55₩21,625.50
20 - 90₩2,123.55₩21,235.50
100 - 240₩2,084.55₩20,845.50
250 - 490₩2,047.50₩20,475.00
500 +₩2,010.45₩20,104.50

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
222-4745
제조사 부품 번호:
IRFH5250TRPBF
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

25V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

52nC

Maximum Power Dissipation Pd

3.6W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Length

6mm

Height

0.9mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDSon (<1.15 mΩ)

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg tested

Low Profile (<0.9 mm)

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