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Infineon HEXFET Type N-Channel MOSFET, 100 A, 25 V Enhancement, 4-Pin PQFN IRFH5250TRPBF

RS 제품 번호:: 222-4745
제조사 부품 번호:: IRFH5250TRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 100 A, 25 V Enhancement, 4-Pin PQFN IRFH5250TRPBF

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩20,849.20

재고있음

16,000 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 10	₩2,084.92	₩20,847.32
20 - 90	₩2,047.32	₩20,469.44
100 - 240	₩2,009.72	₩20,099.08
250 - 490	₩1,974.00	₩19,738.12
500 +	₩1,938.28	₩19,382.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4745
제조사 부품 번호:: IRFH5250TRPBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	25V
	Series	HEXFET
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	1.15mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	52nC
	Maximum Power Dissipation Pd	3.6W
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	6mm
	Width	4.75 mm
	Standards/Approvals	RoHS
	Height	0.9mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 25V
	Series HEXFET
	Package Type PQFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 1.15mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 52nC
	Maximum Power Dissipation Pd 3.6W
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 6mm
	Width 4.75 mm
	Standards/Approvals RoHS
	Height 0.9mm
	Automotive Standard No

Datasheet - IRFH5250TRPBF

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDSon (<1.15 mΩ)

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg tested

Low Profile (<0.9 mm)

Infineon HEXFET Type N-Channel MOSFET, 100 A, 25 V Enhancement, 4-Pin PQFN IRFH5250TRPBF

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