Infineon HEXFET Type P-Channel MOSFET, 7.2 A, 20 V Enhancement, 6-Pin PQFN IRLHS2242TRPBF

RS 제품 번호:: 130-1018
제조사 부품 번호:: IRLHS2242TRPBF
제조업체:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 7.2 A, 20 V Enhancement, 6-Pin PQFN IRLHS2242TRPBF

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대량 구매 할인 기용 가능

Subtotal (1 pack of 25 units)*

₩7,097.00

마지막 RS 재고

최종적인 26,725 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
25 - 975	₩283.88	₩7,106.40
1000 - 1975	₩278.24	₩6,937.20
2000 +	₩272.60	₩6,824.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 130-1018
제조사 부품 번호:: IRLHS2242TRPBF
제조업체:: Infineon

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	7.2A
	Maximum Drain Source Voltage Vds	20V
	Series	HEXFET
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	53mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	9.6W
	Maximum Gate Source Voltage Vgs	12 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	12nC
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Width	2.1 mm
	Standards/Approvals	No
	Length	2.1mm
	Height	0.95mm
	Distrelec Product Id	304-36-993
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 7.2A
	Maximum Drain Source Voltage Vds 20V
	Series HEXFET
	Package Type PQFN
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 53mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 9.6W
	Maximum Gate Source Voltage Vgs 12 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 12nC
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Width 2.1 mm
	Standards/Approvals No
	Length 2.1mm
	Height 0.95mm
	Distrelec Product Id 304-36-993
	Automotive Standard No

Infineon HEXFET Series MOSFET, 7.2A Maximum Continuous Drain Current, 9.6W Maximum Power Dissipation - IRLHS2242TRPBF

This surface mount MOSFET is suitable for applications that demand high-efficiency switching. Its low on-resistance, paired with HEXFET technology, contributes to minimal power loss, making it appropriate for power management tasks within various electronic circuits. With a maximum temperature rating ranging from -55°C to +150°C, it operates effectively in challenging conditions.

Features & Benefits

• Low Rds(on) ensures high efficiency and reduced heat generation

• Capable of handling continuous drain current of 7.2A for robust performance

• Compact 6-pin DFN package facilitates easy integration into limited spaces

• Enhancement mode operation allows for versatile design options

• Provides excellent thermal resistance for improved longevity

Applications

• Used for system/load switching in automation systems

• Ideal for charge and discharge switching in battery management

• Suitable for Compact electronic devices requiring high efficiency

• Employed in electrical control systems and power management circuits

What is the significance of the low Rds(on) feature?

The low Rds(on) feature leads to reduced conduction losses, enhancing overall efficiency and maintaining lower temperatures during operation, which is VITAL for high power applications.

How does this component manage thermal performance?

It has a maximum temperature rating of +150°C, along with low thermal resistance to improve heat dissipation, ensuring stable operation under high-load conditions.

Can it handle varying operational environments?

Yes, it functions effectively across a temperature range of -55°C to +150°C, making it suitable for rigorous applications in diverse climates.

Is it suitable for high-frequency applications?

The MOSFET's design supports high-speed switching, making it effective for high-frequency applications in contemporary electronics.

What are the mounting requirements for optimal performance?

For best outcomes, it should be mounted on a PCB with adequate thermal management features to optimise heat dissipation and electrical connections.