Infineon HEXFET Type N-Channel MOSFET, -160 A, -30 V DirectFET
- RS 제품 번호:
- 257-9332
- 제조사 부품 번호:
- IRF9383MTRPBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 257-9332
- 제조사 부품 번호:
- IRF9383MTRPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -160A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Maximum Power Dissipation Pd | 113W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -160A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Maximum Power Dissipation Pd 113W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the -30V single p channel strong IRFET power mosfet in a direct FET mx package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High current rating
Dual side cooling capability
Low package height of 0.7mm
Low parasitic (1 to 2 nH) inductance package
100 percent lead free (No RoHS exemption)
관련된 링크들
- Infineon HEXFET Type N-Channel MOSFET, -160 A, -30 V DirectFET IRF9383MTRPBF
- Infineon HEXFET Type N-Channel MOSFET, 217 A, 40 V DirectFET
- Infineon HEXFET Type N-Channel MOSFET, 217 A, 40 V DirectFET IRF7480MTRPBF
- Infineon HEXFET Type N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET, 19 A, 200 V Enhancement, 7-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET IRF6775MTRPBF
- Infineon HEXFET Type N-Channel MOSFET, 19 A, 200 V Enhancement, 7-Pin DirectFET IRF6785MTRPBF
- Infineon HEXFET Type N-Channel MOSFET, 124 A, 100 V DirectFET
