제조사부품번호

Infineon HEXFET Type N-Channel MOSFET, 217 A, 40 V DirectFET

RS 제품 번호:: 257-9313
제조사 부품 번호:: IRF7480MTRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 217 A, 40 V DirectFET

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Subtotal (1 reel of 4800 units)*

₩8,157,696.00

일시적 품절

2026년 3월 30일 부터 배송

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수량	한팩당	릴당*
4800 +	₩1,699.52	₩8,154,086.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 257-9313
제조사 부품 번호:: IRF7480MTRPBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	217A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	DirectFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	1.2mΩ
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	96W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	123nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 217A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type DirectFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 1.2mΩ
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 96W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 123nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF7480MTRPBF

The Infineon IRF series is the 40V single n channel strong IRFET power mosfet in a direct FET ME package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.

Dual side cooling capability

Low package height of 0.7mm

Low parasitic (1 to 2 nH) inductance package

100 percent lead free (No ROHS exemption)

Silicon optimized for applications switching below 100 kHz

Product qualification according to JEDEC standard

Infineon HEXFET Type N-Channel MOSFET, 217 A, 40 V DirectFET

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