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Infineon HEXFET Type N-Channel MOSFET, 19 A, 200 V Enhancement, 7-Pin DirectFET

RS 제품 번호:: 215-2580
제조사 부품 번호:: IRF6785MTRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 19 A, 200 V Enhancement, 7-Pin DirectFET

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대량 구매 할인 기용 가능

Subtotal (1 reel of 4800 units)*

₩9,303,744.00

일시적 품절

2026년 3월 30일 부터 배송

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수량	한팩당	릴당*
4800 - 19200	₩1,938.28	₩9,301,939.20
24000 +	₩1,898.80	₩9,115,142.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2580
제조사 부품 번호:: IRF6785MTRPBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	DirectFET
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	57W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type DirectFET
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 57W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRF6785MTRPBF

The Infineon HEXFET Power MOSFET has 200V maximum drain source voltage in a DirectFET MZ package rated at 19 amperes optimized with low on resistance. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6785MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wire bonded SOIC packaging.

Latest MOSFET Silicon technology

Key parameters optimized for Class-D audio amplifier applications

Dual sided cooling compatible

Lead-Free (Qualified up to 260°C Reflow)

Infineon HEXFET Type N-Channel MOSFET, 19 A, 200 V Enhancement, 7-Pin DirectFET

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