Vishay Type N-Channel MOSFET, 5.3 A, 500 V IPAK SIHU5N50D-GE3
- RS 제품 번호:
- 256-7417
- 제조사 부품 번호:
- SIHU5N50D-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩12,690.00
마지막 RS 재고
- 최종적인 3,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩1,269.00 | ₩12,690.00 |
| 20 - 40 | ₩1,244.56 | ₩12,445.60 |
| 50 - 90 | ₩1,220.12 | ₩12,201.20 |
| 100 - 490 | ₩987.00 | ₩9,870.00 |
| 500 + | ₩817.80 | ₩8,178.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 256-7417
- 제조사 부품 번호:
- SIHU5N50D-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.3A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.3A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor N-channel 500 V 5.3A (Tc) 104W (Tc) through hole TO-251AA and its applications are consumer electronicsdisplays, server and telecom power supplies, SMPS and in Industrial are welding, induction heating, motor drives and battery chargers.
Low area specific on-resistance
Reduced capacitive switching losses
High body diode ruggedness
Optimal efficiency and operation
Simple gate drive circuitry
Fast switching
관련된 링크들
- Vishay SiHU5N80AE Type N-Channel MOSFET, 4.4 A, 800 V Enhancement, 3-Pin IPAK SIHU5N80AE-GE3
- Vishay SiHU4N80AE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin IPAK SIHU4N80AE-GE3
- Vishay SiHU5N80AE Type N-Channel MOSFET, 4.4 A, 800 V Enhancement, 3-Pin IPAK
- Vishay SiHU4N80AE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin IPAK
- Vishay Type N-Channel MOSFET, 5.3 A, 500 V IPAK
- Vishay E Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin IPAK SIHU2N80AE-GE3
- Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-251 SIHU6N80AE-GE3
- Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-251
