onsemi NTBL Type N-Channel MOSFET, 46 A, 650 V Enhancement, 8-Pin HPSOF-8L NTBL060N065SC1
- RS 제품 번호:
- 220-562
- 제조사 부품 번호:
- NTBL060N065SC1
- 제조업체:
- onsemi
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₩13,404.40
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩13,404.40 |
| 10 - 99 | ₩12,050.80 |
| 100 - 499 | ₩11,129.60 |
| 500 - 999 | ₩10,321.20 |
| 1000 + | ₩8,403.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 220-562
- 제조사 부품 번호:
- NTBL060N065SC1
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HPSOF-8L | |
| Series | NTBL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22.6 V | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Power Dissipation Pd | 170W | |
| Forward Voltage Vf | 4.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Width | 10.38 mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 9.9mm | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HPSOF-8L | ||
Series NTBL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22.6 V | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Power Dissipation Pd 170W | ||
Forward Voltage Vf 4.3V | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Width 10.38 mm | ||
Standards/Approvals RoHS Compliant | ||
Length 9.9mm | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Speed Switching with Low Capacitance
RoHS Compliant
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