onsemi NTBL N-Channel MOSFET, 46 A, 650 V Enhancement, 8-Pin HPSOF-8L NTBL060N065SC1
- RS 제품 번호:
- 220-562
- 제조사 부품 번호:
- NTBL060N065SC1
- 제조업체:
- onsemi
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View bulk pricing optionsSubtotal (1 tape of 1 unit)*
₩15,920.00
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- 추가로 2026년 10월 26일 부터 2,000 개 단위 배송
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩15,920.00 |
| 10 - 99 | ₩14,320.00 |
| 100 - 499 | ₩13,200.00 |
| 500 - 999 | ₩12,240.00 |
| 1000 + | ₩9,980.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 220-562
- 제조사 부품 번호:
- NTBL060N065SC1
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HPSOF-8L | |
| Series | NTBL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Forward Voltage Vf | 4.3V | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Gate Source Voltage Vgs | 22.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 10.38mm | |
| Length | 9.9mm | |
| Height | 2.3mm | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HPSOF-8L | ||
Series NTBL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Forward Voltage Vf 4.3V | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Gate Source Voltage Vgs 22.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Width 10.38mm | ||
Length 9.9mm | ||
Height 2.3mm | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Speed Switching with Low Capacitance
RoHS Compliant
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