Vishay Type N-Channel MOSFET, 44.4 A, 60 V Depletion, 8-Pin PowerPAK 1212-8
- RS 제품 번호:
- 252-0282
- 제조사 부품 번호:
- SIS4604DN-T1-GE3
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩1,618,680.00
마지막 RS 재고
- 최종적인 3,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 6000 | ₩539.56 | ₩1,620,372.00 |
| 9000 + | ₩530.16 | ₩1,588,224.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 252-0282
- 제조사 부품 번호:
- SIS4604DN-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 44.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 33.7W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 14.5nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 3.3 mm | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 44.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 33.7W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 14.5nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 3.3 mm | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
관련된 링크들
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