Vishay Type N-Channel MOSFET, 12 A, 30 V, 8-Pin PowerPAK 1212-8
- RS 제품 번호:
- 180-7358
- 제조사 부품 번호:
- SIS412DN-T1-GE3
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩1,325,400.00
재고있음
- 3,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 12000 | ₩441.80 | ₩1,327,092.00 |
| 15000 + | ₩432.40 | ₩1,300,020.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-7358
- 제조사 부품 번호:
- SIS412DN-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 15.6W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.61mm | |
| Height | 0.79mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Width | 3.61 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 15.6W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.61mm | ||
Height 0.79mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Width 3.61 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, PowerPAK-1212-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 24mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 15.6W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Load switches
• Notebook PCs
• System power
관련된 링크들
- Vishay Type N-Channel MOSFET, 12 A, 30 V, 8-Pin PowerPAK 1212-8 SIS412DN-T1-GE3
- Vishay Type P-Channel MOSFET, 35 A, 40 V, 8-Pin PowerPAK 1212-8
- Vishay Type P-Channel MOSFET, 35 A, 40 V, 8-Pin PowerPAK 1212-8 SIS443DN-T1-GE3
- Vishay SiS4608DN Type N-Channel MOSFET, 35.7 A, 60 V Depletion, 8-Pin PowerPAK 1212-8
- Vishay SiS126DN Type N-Channel MOSFET, 45.1 A, 80 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiS4608DN Type N-Channel MOSFET, 35.7 A, 60 V Depletion, 8-Pin PowerPAK 1212-8 SIS4608DN-T1-GE3
- Vishay SiS126DN Type N-Channel MOSFET, 45.1 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SIS126DN-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 18 A, 30 V, 8-Pin PowerPAK 1212-8
