Vishay Type N-Channel MOSFET, 153 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR5802EP-T1-RE3

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Subtotal (1 pack of 5 units)*

₩19,533.20

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5 - 45₩3,906.64₩19,533.20
50 - 95₩3,711.12₩18,555.60
100 - 245₩3,485.52₩17,427.60
250 - 995₩3,241.12₩16,205.60
1000 +₩2,985.44₩14,927.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
252-0260
제조사 부품 번호:
SIDR5802EP-T1-RE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

153A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0042mΩ

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Power Dissipation Pd

150W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.15mm

Width

5.15 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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