Vishay Type N-Channel MOSFET, 126 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR5102EP-T1-RE3

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Subtotal (1 pack of 2 units)*

₩9,794.80

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2 - 48₩4,897.40₩9,794.80
50 - 98₩4,653.00₩9,306.00
100 - 248₩4,371.00₩8,742.00
250 - 998₩4,070.20₩8,140.40
1000 +₩3,741.20₩7,482.40

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포장 옵션
RS 제품 번호:
252-0251
제조사 부품 번호:
SIDR5102EP-T1-RE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Typical Gate Charge Qg @ Vgs

46.1nC

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

6.15mm

Standards/Approvals

No

Width

5.15 mm

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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