Vishay SiD N channel-Channel MOSFET, 153 A, 80 V Enhancement, 8-Pin PowerPAK SO-8 SiDR5802EP
- RS 제품 번호:
- 735-134
- 제조사 부품 번호:
- SiDR5802EP
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩6,218.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩6,218.00 |
| 10 - 24 | ₩4,048.00 |
| 25 - 99 | ₩2,124.00 |
| 100 - 499 | ₩2,058.00 |
| 500 + | ₩2,012.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 735-134
- 제조사 부품 번호:
- SiDR5802EP
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 153A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SiD | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0029Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 80V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 37.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 7mm | |
| Height | 2mm | |
| Width | 6mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 153A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SiD | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0029Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 80V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 37.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 7mm | ||
Height 2mm | ||
Width 6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay N-Channel MOSFET rated at 80V drain-source voltage for high-efficiency power conversion in AI server and data center applications. It features ultra-low on-resistance of 2.9mΩ maximum at 10V gate drive to reduce conduction losses in synchronous buck topologies.
153A continuous drain current at TC=25°C
28nC typical total gate charge for fast switching
-55°C to +175°C extended temperature range
관련된 링크들
- Vishay Type N-Channel MOSFET, 153 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR5802EP-T1-RE3
- Vishay SiD N channel-Channel MOSFET, 421 A, 30 V Enhancement, 8-Pin PowerPAK SO-8 SiDR500EP
- Vishay SiD N channel-Channel MOSFET, 148 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SiDR510EP
- Vishay SiD N channel-Channel MOSFET, 291 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SiDR402EP
- Vishay SiD N channel-Channel MOSFET, 227 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SiDR626EP
- Vishay Type N-Channel MOSFET, 153 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay SIDR Type N-Channel MOSFET, 227 A, 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
- Vishay Type N-Channel MOSFET, 415 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR220EP-T1-RE3