Vishay Type N-Channel MOSFET, 153 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC
- RS 제품 번호:
- 252-0259
- 제조사 부품 번호:
- SIDR5802EP-T1-RE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩6,249,120.00
마지막 RS 재고
- 최종적인 3,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 6000 | ₩2,083.04 | ₩6,246,864.00 |
| 9000 + | ₩2,039.80 | ₩6,121,656.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 252-0259
- 제조사 부품 번호:
- SIDR5802EP-T1-RE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 153A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0042mΩ | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 46.1nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 153A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0042mΩ | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 46.1nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
관련된 링크들
- Vishay Type N-Channel MOSFET, 153 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR5802EP-T1-RE3
- Vishay Type N-Channel MOSFET, 78 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET, 148 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET, 126 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET, 415 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET, 39.6 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET, 90.9 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET, 126 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR5102EP-T1-RE3