Vishay N-Channel MOSFET, 415 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR220EP-T1-RE3
- RS 제품 번호:
- 239-8614
- 제조사 부품 번호:
- SiDR220EP-T1-RE3
- 제조업체:
- Vishay
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
₩11,676,000.00
마지막 RS 재고
- 최종적인 3,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 12000 | ₩3,892.00 | ₩11,673,000.00 |
| 15000 + | ₩3,696.00 | ₩11,089,200.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 239-8614
- 제조사 부품 번호:
- SiDR220EP-T1-RE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 415A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00082Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 120W | |
| Typical Gate Charge Qg @ Vgs | 46.1nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 125°C | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Width | 5.15mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 415A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00082Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 120W | ||
Typical Gate Charge Qg @ Vgs 46.1nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 125°C | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Width 5.15mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 25 V and 175 °C temperature. This MOSFET used for high power density, synchronous buck converter and load switching.
Top side cooling feature provides additional venue for thermal transfer
Low power loss
UIS tested
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