Infineon BSP Type P-Channel MOSFET, 680 mA, -100 V Enhancement, 3-Pin SOT-223 BSP316PH6327XTSA1

RS 제품 번호:: 250-0535
제조사 부품 번호:: BSP316PH6327XTSA1
제조업체:: Infineon

Infineon BSP Type P-Channel MOSFET, 680 mA, -100 V Enhancement, 3-Pin SOT-223 BSP316PH6327XTSA1

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Subtotal (1 reel of 1000 units)*

₩504,000.00

일시적 품절

2027년 1월 11일 부터 배송

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수량	한팩당	릴당*
1000 - 1000	₩504.00	₩503,200.00
2000 - 2000	₩488.00	₩488,200.00
3000 +	₩474.00	₩473,400.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 250-0535
제조사 부품 번호:: BSP316PH6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	680mA
	Maximum Drain Source Voltage Vds	-100V
	Series	BSP
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1800mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 680mA
	Maximum Drain Source Voltage Vds -100V
	Series BSP
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1800mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Infineon BSP Series MOSFET, 100V Maximum Drain‑Source Voltage, +150°C Maximum Operating Temperature - BSP316PH6327XTSA1

This p‑channel MOSFET is a surface‑mount transistor designed for power switching in temperature‑demanding environments. It operates across a wide thermal range and is intended for applications requiring controlled drain‑source conduction with moderate continuous current capability. The component meets automotive screening and environmental restrictions for use where standards compliance is required.

Features and Benefits:

• 1800mΩ Rds(on) reduces conduction losses and simplifies thermal design
• 0.68A continuous drain current supports low‑to‑moderate load switching
• 80nC typical gate charge enables Faster gate transitions with lower drive energy
• 81W power dissipation allows sustained energy handling in constrained packages
• +150°C maximum operating temperature permits use in high‑temperature assemblies

Applications

• Suitable for automotive subsystem power management
• Ideal for surface‑mount regulator and load‑switch circuits
• Used with battery management and low‑current switching modules
• Can be used for thermal‑tolerant power‑path control on Compact boards
• Suitable for designs requiring RoHS‑compliant P‑channel components

What gate voltage limits must be observed during operation?

The device accepts up to 20V between gate and source and should not exceed that value.

What package and mounting style does it use for PCB integration?

It is supplied in a SOT‑223 package intended for surface mounting to aid thermal coupling.

What electrothermal behaviour applies for sustained dissipation?

The part is rated to dissipate up to 81W under specified conditions but requires appropriate PCB thermal management.

Is the device qualified for automotive environments?

It complies with AEC‑Q101 standards for automotive‑grade semiconductor screening.

What environmental restriction standard does it meet?

The component is RoHS compliant, meeting lead‑free and restricted‑substance requirements.