Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223 BSP171PH6327XTSA1

RS 제품 번호:: 167-942
제조사 부품 번호:: BSP171PH6327XTSA1
제조업체:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223 BSP171PH6327XTSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩10,396.40

재고있음

추가로 2025년 12월 29일 부터 10 개 단위 배송
추가로 2026년 1월 05일 부터 20,630 개 단위 배송

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수량	한팩당	한팩당*
10 - 240	₩1,039.64	₩10,396.40
250 - 490	₩1,013.32	₩10,133.20
500 +	₩998.28	₩9,982.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 167-942
제조사 부품 번호:: BSP171PH6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.9A
	Maximum Drain Source Voltage Vds	60V
	Series	SIPMOS
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.8W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	13nC
	Forward Voltage Vf	-1.1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	6.5mm
	Height	1.6mm
	Width	3.5 mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101
	Distrelec Product Id	304-36-976

	모두 선택
	브랜드 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.9A
	Maximum Drain Source Voltage Vds 60V
	Series SIPMOS
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.8W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 13nC
	Forward Voltage Vf -1.1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 6.5mm
	Height 1.6mm
	Width 3.5 mm
	Standards/Approvals No
	Automotive Standard AEC-Q101
	Distrelec Product Id 304-36-976

Infineon SIPMOS® Series MOSFET, 1.9A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP171PH6327XTSA1

This MOSFET is designed for high-performance switching applications, utilising P-channel technology. With SIPMOS® technology, it ensures dependable operation in a compact SOT-223 package, making it a suitable option for automotive and industrial applications. The continuous drain current rating of 1.9A and a maximum voltage of 60V enhance its effectiveness in efficiently managing power across various uses.

Features & Benefits

• P-channel configuration supports low side switching applications

• Enhancement mode operation promotes efficient performance

• Surface mount design conserves valuable PCB space

• Rated for high temperatures up to +150°C, ensuring durability

• Low Rds(on) diminishes power loss during switching

Applications

• Load switching in automotive electronics

• Power management circuits for energy efficiency

• High-frequency requiring rapid switching

• Driving loads in consumer electronic devices

• Power supply circuits necessitating compact solutions

What is the maximum drain-source voltage this component can handle?

The component can withstand a maximum drain-source voltage of 60V, making it suitable for various applications.

How does this component perform at elevated temperatures?

It operates effectively at temperatures up to +150°C, providing performance in demanding environments.

Can it be used in battery-operated circuits?

Yes, its low Rds(on) significantly reduces power loss, making it well-suited for battery-operated devices.

What is the significance of the avalanche rating?

The avalanche rating indicates that the device can absorb energy spikes, enhancing its durability and reliability during transients.

How can I ensure proper installation on the PCB?

It is essential to follow the dimension specifications for the SOT-223 package and to implement adequate thermal management during installation.