Infineon Dual N BSD840N 2 Type N-Channel OptiMOSTM2 Small-Signal-Transistors, 880 mA, 20 V Dual N, 6-Pin SOT-363

RS 제품 번호:: 250-0525
제조사 부품 번호:: BSD840NH6327XTSA1
제조업체:: Infineon

Infineon Dual N BSD840N 2 Type N-Channel OptiMOSTM2 Small-Signal-Transistors, 880 mA, 20 V Dual N, 6-Pin SOT-363

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Subtotal (1 reel of 3000 units)*

₩420,000.00

일시적 품절

2027년 2월 18일 부터 9,000 개 단위 배송

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수량	한팩당	릴당*
3000 - 3000	₩140.00	₩421,800.00
6000 - 6000	₩126.00	₩379,800.00
9000 +	₩124.00	₩372,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 250-0525
제조사 부품 번호:: BSD840NH6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	OptiMOSTM2 Small-Signal-Transistors
	Channel Type	Type N
	Maximum Continuous Drain Current Id	880mA
	Maximum Drain Source Voltage Vds	20V
	Series	BSD840N
	Package Type	SOT-363
	Mount Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance Rds	400mΩ
	Channel Mode	Dual N
	Maximum Gate Source Voltage Vgs	750mV
	Typical Gate Charge Qg @ Vgs	0.26nC
	Maximum Power Dissipation Pd	400mW
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual N
	Standards/Approvals	IEC61249-2-21, RoHS
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type OptiMOSTM2 Small-Signal-Transistors
	Channel Type Type N
	Maximum Continuous Drain Current Id 880mA
	Maximum Drain Source Voltage Vds 20V
	Series BSD840N
	Package Type SOT-363
	Mount Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance Rds 400mΩ
	Channel Mode Dual N
	Maximum Gate Source Voltage Vgs 750mV
	Typical Gate Charge Qg @ Vgs 0.26nC
	Maximum Power Dissipation Pd 400mW
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual N
	Standards/Approvals IEC61249-2-21, RoHS
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Infineon BSD840N Series OptiMOSTM2 Small-Signal-Transistors, 20V Drain-Source Voltage, 0.88A Continuous Drain Current - BSD840NH6327XTSA1

This optimostm2 small-signal-transistors device is a dual N-channel MOSFET designed for Compact signal-handling and switching tasks in automotive-grade environments. It operates at low gate voltage and provides a balance between on-resistance and current capability for control circuits in constrained layouts. The package and construction suit board-level implementation where thermal endurance and regulatory material standards are required.

Features and Benefits:

• 400mΩ Rds reduces conduction losses for low-power switching
• 0.75V maximum gate threshold enables low-voltage drive compatibility
• 0.26nC gate charge minimises switching energy and drive requirements
• 0.88A continuous current supports modest load currents reliably
• 150°C maximum temperature rating allows high-temperature operation

Applications

• Suitable for dual-channel signal switching in automotive electronics
• Ideal for low-voltage gate-drive power management circuits
• Used with Compact board layouts requiring SOT-363 packaging
• Can be used for sensor Interface switching in harsh environments
• Used for dual MOSFET arrangements in control modules

What package type does it use for Compact designs?

It is supplied in a SOT-363 package with six pins suitable for dense PCB placement.

Which automotive standard does it meet for qualification?

It fulfils an automotive component qualification standard applicable to discrete semiconductors.

What temperature range can the device operate within?

It is specified for operation from -55°C up to 150°C.

How many transistors are available per chip and how are they configured?

The chip contains two elements arranged as a dual N configuration.

Which material and environmental standard applies to its construction?

The device conforms to RoHS and relevant IEC material specifications.