Infineon BSD Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 6-Pin SOT-363 BSD316SNH6327XTSA1
- RS 제품 번호:
- 258-0699
- 제조사 부품 번호:
- BSD316SNH6327XTSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩1,992.80
재고있음
- 15,780 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩199.28 | ₩1,992.80 |
| 20 - 90 | ₩189.88 | ₩1,898.80 |
| 100 - 240 | ₩178.60 | ₩1,786.00 |
| 250 - 490 | ₩165.44 | ₩1,654.40 |
| 500 + | ₩152.28 | ₩1,522.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-0699
- 제조사 부품 번호:
- BSD316SNH6327XTSA1
- 제조업체:
- Infineon
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참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-363 | |
| Series | BSD | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Length | 2mm | |
| Width | 1.25 mm | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-363 | ||
Series BSD | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Length 2mm | ||
Width 1.25 mm | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon N-channel small signal MOSFET automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
Enhancement mode
Logic level
Avalanche rated
Fast switching
Dv/dt rated
Low RDS(on) provides higher efficiency and extends battery life
Small packages save PCB space
Best-in-class quality and reliability
관련된 링크들
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- Infineon OptiMOS 2 Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin SOT-363
- Infineon BSD Type P-Channel MOSFET, -0.39 A, 40 V Enhancement, 6-Pin SOT-363
- Infineon BSD235C 2 Type N, Type P-Channel MOSFET, 0.95 A, 20 V Enhancement, 6-Pin SOT-363
- Infineon BSV Type P-Channel MOSFET, -1.5 A, 40 V Enhancement, 6-Pin SOT-363 BSV236SPH6327XTSA1
