Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin
- RS 제품 번호:
- 258-3881
- 제조사 부품 번호:
- IPG20N06S4L11ATMA2
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩5,602.40
재고있음
- 4,996 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩2,801.20 | ₩5,602.40 |
| 10 - 98 | ₩2,660.20 | ₩5,320.40 |
| 100 - 248 | ₩2,500.40 | ₩5,000.80 |
| 250 - 498 | ₩2,321.80 | ₩4,643.60 |
| 500 + | ₩2,143.20 | ₩4,286.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-3881
- 제조사 부품 번호:
- IPG20N06S4L11ATMA2
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | OptiMOSTM-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Transistor Configuration | Dual N Channel Logic Level Enhancement Mode | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC Q101 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series OptiMOSTM-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Transistor Configuration Dual N Channel Logic Level Enhancement Mode | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC Q101 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-T2 power-transistor is dual super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Same thermal and electrical performance as a DPAK with the same die size.
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
관련된 링크들
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 2 Type N-Channel MOSFET, 20 A, 60 V N, 8-Pin SuperSO8
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Type N-Channel MOSFET, 20 A, 100 V Dual N, 8-Pin TDSON
- Infineon Dual N Channel Logic Level Enhancement Mode IPG20N06S4L-11 Type N-Channel MOSFET, 20 A, 60 V TDSON
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin
- Infineon Dual N Channel Normal Level IPG 2 Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin SuperSO
- Infineon Dual N Channel Normal Level Enhancement Mode IPG16N10S4-61 Type N-Channel MOSFET, 16 A, 100 V Dual N, 8-Pin
- Infineon IPG Dual N-Channel MOSFET, 20 A, 40 V P TDSON