제조사부품번호

Infineon IAUZ N-Channel MOSFET, 30 A, 60 V Enhancement, 8-Pin PQFN IAUZ30N06S5L140ATMA1

RS 제품 번호:: 249-6898
제조사 부품 번호:: IAUZ30N06S5L140ATMA1
제조업체:: Infineon

Infineon IAUZ N-Channel MOSFET, 30 A, 60 V Enhancement, 8-Pin PQFN IAUZ30N06S5L140ATMA1

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Subtotal (1 pack of 5 units)*

₩11,080.00

3,765 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 5	₩2,216.00	₩11,080.00
10 - 95	₩1,996.00	₩9,980.00
100 - 245	₩1,780.00	₩8,900.00
250 - 495	₩1,604.00	₩8,020.00
500 +	₩1,448.00	₩7,240.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 249-6898
제조사 부품 번호:: IAUZ30N06S5L140ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	60V
	Series	IAUZ
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	14mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 60V
	Series IAUZ
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 14mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IAUZ30N06S5L140ATMA1

Infineon IAUZ Series MOSFET, 60V Maximum Drain‑Source Voltage, 30A Maximum Continuous Drain Current - IAUZ30N06S5L140ATMA1

This MOSFET is an N‑channel enhancement device designed for high‑current switching in Compact surface‑mount assemblies. It operates across a wide thermal range and is built for demanding environments where low conduction loss and substantial power handling are required.

Features and Benefits:

• 14mΩ Rds(on) reduces conduction losses for efficient power delivery
• 81W power dissipation supports sustained high‑power operation
• 80nC typical gate charge enables controlled switching with moderate drive energy
• 20V gate tolerance allows use with higher‑voltage gate‑drive circuits
• PQFN package improves the thermal path for surface‑mounted assemblies

Applications

• Suitable for 60V automotive power‑distribution circuits
• Ideal for high‑current DC-DC converters in vehicles
• Used with motor‑drive stages in automotive electronics
• Can be used for switch‑mode power supplies requiring Compact mounting
• Suitable for high‑temperature control electronics in harsh environments

What temperature range can it sustain in operation?

It is rated to function from -55°C up to 175°C.

How does the package support thermal management?

The PQFN form provides a direct thermal route to the PCB for improved heat transfer.

What gate‑drive considerations apply for switching?

Expect a typical gate charge of 80nC at the specified gate voltage, requiring a driver capable of sourcing that charge for Rapid transitions.

Which mounting method is intended for installation?

It is designed for surface‑mount placement on PCB assemblies.