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Infineon IAUT N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin PQFN IAUZ40N10S5N130ATMA1

RS 제품 번호:: 229-1812
제조사 부품 번호:: IAUZ40N10S5N130ATMA1
제조업체:: Infineon

Infineon IAUT N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin PQFN IAUZ40N10S5N130ATMA1

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Subtotal (1 reel of 5000 units)*

₩4,500,000.00

15,000 개 단위 배송 준비 완료

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RS 제품 번호:: 229-1812
제조사 부품 번호:: IAUZ40N10S5N130ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	100V
	Series	IAUT
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	13mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	68W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+175°C
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 100V
	Series IAUT
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 13mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 68W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +175°C
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IAUZ40N10S5N130ATMA1

Infineon IAUT Series MOSFET, 100V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - IAUZ40N10S5N130ATMA1

This MOSFET is a high-current, enhancement-mode N-channel transistor designed for surface-mounted power switching in demanding electronic systems. It operates across a wide temperature span and is suitable for applications requiring robust gate handling and substantial continuous current capability.

Features and Benefits:

• 100V drain-source rating enabling higher-voltage DC-DC conversion
• 40A continuous drain current supporting sustained high-load operation
• 13mΩ low Rds(on) reducing conduction losses during switching
• 68W power dissipation allowing greater thermal headroom
• ±20V gate-source limit providing tolerance for gate-drive swings
• −55°C to +175°C temperature range ensuring operation in harsh environments

Applications

• Suitable for DC-DC converter stages in power supplies
• Ideal for high-current switching in automotive environments
• Used for power management in electric vehicle subsystems
• Can be used for surface-mount designs requiring leadless packaging
• Used with battery management and distribution circuits

What package type does it use for board assembly?

It is supplied in a leadless PQFN package intended for surface mounting.

What gate-drive considerations are important for reliable switching?

Gate excursions must remain within ±20V to avoid gate-dielectric stress and ensure safe operation.

How does thermal management impact continuous current capability?

The 68W power-dissipation rating indicates the device can handle significant heat, adequate PCB thermal vias and copper area are required to sustain 40A continuous drain current.

What environmental limits govern its deployment in extreme conditions?

It is specified to function from −55°C up to +175°C, allowing use across a broad range of ambient and elevated temperatures.