Infineon IPT Type N-Channel MOSFET, 122 A, 150 V Enhancement, 8-Pin HSOF-8
- RS 제품 번호:
- 249-3355
- 제조사 부품 번호:
- IPT063N15N5ATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 2000 units)*
₩6,414,560.00
일시적 품절
- 2026년 7월 06일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2000 - 2000 | ₩3,207.28 | ₩6,415,312.00 |
| 4000 - 4000 | ₩3,143.36 | ₩6,286,720.00 |
| 6000 + | ₩3,081.32 | ₩6,161,136.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 249-3355
- 제조사 부품 번호:
- IPT063N15N5ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 122A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | IPT | |
| Package Type | HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 122A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series IPT | ||
Package Type HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon Optimos 5 power mosfet is N-Channel mosfet offers very low on-resistance and superior thermal resistance. This device is Pb (Lead) and halogen free. It comes in a surface mount, PG-HSOF-8 package.
Vds (drain to source voltage) is 150 V
Rds (max on) is 6.3 milliohm and Id is 122 A
Qdss and Qg values are 131 nC and 47 nC respectively
관련된 링크들
- Infineon IPT Type N-Channel MOSFET, 122 A, 150 V Enhancement, 8-Pin HSOF-8 IPT063N15N5ATMA1
- Infineon IPT Type N-Channel MOSFET, 143 A, 150 V Enhancement, 8-Pin HSOF-8
- Infineon IPT Type N-Channel MOSFET, 190 A, 150 V Enhancement, 8-Pin HSOF-8
- Infineon IPT Type N-Channel MOSFET, 174 A, 150 V Enhancement, 8-Pin HSOF-8
- Infineon IPT Type N-Channel MOSFET, 174 A, 150 V Enhancement, 8-Pin HSOF-8 IPT044N15N5ATMA1
- Infineon IPT Type N-Channel MOSFET, 143 A, 150 V Enhancement, 8-Pin HSOF-8 IPT054N15N5ATMA1
- Infineon IPT Type N-Channel MOSFET, 190 A, 150 V Enhancement, 8-Pin HSOF-8 IPT039N15N5ATMA1
- Infineon IPT Type N-Channel MOSFET, 169 A, 80 V Enhancement, 8-Pin PG-HSOF-8