Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement, 4-Pin TO-247 C3M0060065K
- RS 제품 번호:
- 248-8939
- 제조사 부품 번호:
- C3M0060065K
- 제조업체:
- Wolfspeed
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩24,383.60
재고있음
- 48 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 1 | ₩24,383.60 |
| 2 - 4 | ₩23,650.40 |
| 5 - 9 | ₩22,936.00 |
| 10 - 14 | ₩22,240.40 |
| 15 + | ₩21,563.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 248-8939
- 제조사 부품 번호:
- C3M0060065K
- 제조업체:
- Wolfspeed
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Wolfspeed | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 469W | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Length | 23.63mm | |
| Width | 16.13 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Wolfspeed | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 469W | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Length 23.63mm | ||
Width 16.13 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The wolfspeeds 650V MOSFETs are optimised for high-performance power electronics applications, including server power supplies, electric vehicle charging systems and many more.
3rd Generation SiC MOSFET technology
High blocking voltage with low on-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
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