Infineon HEXFET 2 Type P, Type N-Channel MOSFET, 4.7 A, -55 V, 8-Pin SOIC AUIRF7343QTR
- RS 제품 번호:
- 243-9288
- 제조사 부품 번호:
- AUIRF7343QTR
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩5,452.00
마지막 RS 재고
- 최종적인 15,986 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩2,726.00 | ₩5,452.00 |
| 10 - 98 | ₩2,641.40 | ₩5,282.80 |
| 100 - 248 | ₩2,566.20 | ₩5,132.40 |
| 250 - 498 | ₩2,481.60 | ₩4,963.20 |
| 500 + | ₩2,406.40 | ₩4,812.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 243-9288
- 제조사 부품 번호:
- AUIRF7343QTR
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | -55V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.11mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds -55V | ||
Series HEXFET | ||
Package Type SOIC | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.11mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon AUIRF7343QTR specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Advanced Planar Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
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