제조사부품번호

Infineon Dual HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8

RS 제품 번호:: 223-8452
제조사 부품 번호:: AUIRF7341QTR
제조업체:: Infineon

Infineon Dual HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8

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대량 구매 할인 기용 가능

Subtotal (1 reel of 4000 units)*

₩7,249,280.00

마지막 RS 재고

최종적인 12,000 개 unit(s)이 배송 준비 됨

수량	한팩당	릴당*
4000 - 4000	₩1,812.32	₩7,253,040.00
8000 - 8000	₩1,776.60	₩7,107,904.00
12000 +	₩1,740.88	₩6,965,776.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 223-8452
제조사 부품 번호:: AUIRF7341QTR
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.1A
	Maximum Drain Source Voltage Vds	55V
	Package Type	SO-8
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	500mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	3 V
	Typical Gate Charge Qg @ Vgs	29nC
	Transistor Configuration	Dual
	Maximum Operating Temperature	175°C
	Width	4 mm
	Standards/Approvals	No
	Height	1.5mm
	Length	5mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.1A
	Maximum Drain Source Voltage Vds 55V
	Package Type SO-8
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 500mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 3 V
	Typical Gate Charge Qg @ Vgs 29nC
	Transistor Configuration Dual
	Maximum Operating Temperature 175°C
	Width 4 mm
	Standards/Approvals No
	Height 1.5mm
	Length 5mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet - AUIRF7341QTR

The Infineon HEXFET power MOSFET in a dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.

Advanced planar technology

Dynamic dV/dT rating

Logic level gate drive

175°C operating temperature

Fast switching

Lead free

RoHS compliant

Automotive qualified

Infineon Dual HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8

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