Infineon Dual HEXFET 2 N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8

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RS 제품 번호:
223-8452
제조사 부품 번호:
AUIRF7341QTR
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

5.1A

Maximum Drain Source Voltage Vds

55V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

500mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

3V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

29nC

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4mm

Height

1.5mm

Length

5mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon HEXFET power MOSFET in a dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.

Advanced planar technology

Dynamic dV/dT rating

Logic level gate drive

175°C operating temperature

Fast switching

Lead free

RoHS compliant

Automotive qualified

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