Infineon IPL Type N-Channel MOSFET, 107 A, 700 V Enhancement, 5-Pin ThinPAK 8x8 IPL65R200CFD7AUMA1

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Subtotal (1 pack of 2 units)*

₩9,174.40

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한팩당*
2 - 8₩4,587.20₩9,174.40
10 - 98₩4,474.40₩8,948.80
100 - 248₩4,371.00₩8,742.00
250 - 498₩4,267.60₩8,535.20
500 +₩4,164.20₩8,328.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
240-6625
제조사 부품 번호:
IPL65R200CFD7AUMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

107A

Maximum Drain Source Voltage Vds

700V

Series

IPL

Package Type

ThinPAK 8x8

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

95mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

8.1mm

Automotive Standard

AEC-Q101

The Infineon 650V CoolMOS™ CFD7 super junction MOSFET comes in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Significantly reduced switching losses compared to competition

Extra safety margin for designs with increased bus voltage

Improved full-load efficiency in industrial SMPS applications

High power density

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