제조사부품번호

Infineon IPD50R Type N-Channel MOSFET, 40 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R060CFD7AUMA1

RS 제품 번호:: 222-4907
제조사 부품 번호:: IPL60R060CFD7AUMA1
제조업체:: Infineon

Infineon IPD50R Type N-Channel MOSFET, 40 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R060CFD7AUMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩19,439.20

일시적 품절

2026년 5월 29일 부터 배송

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수량	한팩당	한팩당*
2 - 8	₩9,719.60	₩19,439.20
10 - 98	₩9,541.00	₩19,082.00
100 - 248	₩9,371.80	₩18,743.60
250 - 498	₩9,202.60	₩18,405.20
500 +	₩9,033.40	₩18,066.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4907
제조사 부품 번호:: IPL60R060CFD7AUMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	600V
	Series	IPD50R
	Package Type	ThinPAK
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	79nC
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	219W
	Maximum Operating Temperature	150°C
	Width	8.1 mm
	Standards/Approvals	No
	Length	8.1mm
	Height	1.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 600V
	Series IPD50R
	Package Type ThinPAK
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 79nC
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 219W
	Maximum Operating Temperature 150°C
	Width 8.1 mm
	Standards/Approvals No
	Length 8.1mm
	Height 1.1mm
	Automotive Standard No

Datasheet - IPL60R060CFD7AUMA1

The Infineon 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions

Infineon IPD50R Type N-Channel MOSFET, 40 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R060CFD7AUMA1

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