Infineon IPL Type N-Channel MOSFET, 21 A, 650 V Enhancement, 5-Pin ThinPAK 8x8

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Subtotal (1 reel of 3000 units)*

₩9,339,840.00

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  • 2026년 5월 22일 부터 배송
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3000 - 3000₩3,113.28₩9,337,584.00
6000 - 6000₩3,049.36₩9,150,900.00
9000 +₩2,989.20₩8,968,164.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
240-6619
제조사 부품 번호:
IPL65R130CFD7AUMA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

650V

Series

IPL

Package Type

ThinPAK 8x8

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

95mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

171W

Forward Voltage Vf

1V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

150°C

Length

8.1mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon 650V CoolMOS™ CFD7 super junction MOSFET comes in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Significantly reduced switching losses compared to competition

Extra safety margin for designs with increased bus voltage

Improved full-load efficiency in industrial SMPS applications

High power density

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