Infineon IPL N-Channel MOSFET, 29 A, 650 V Enhancement, 5-Pin ThinPAK 8x8 IPL65R095CFD7AUMA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
RS 제품 번호:
240-6614
제조사 부품 번호:
IPL65R095CFD7AUMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

650V

Package Type

ThinPAK 8x8

Series

IPL

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

95mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

171W

Maximum Operating Temperature

150°C

Length

8.1mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon 650V CoolMOS™ CFD7 super junction MOSFET comes in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Significantly reduced switching losses compared to competition

Extra safety margin for designs with increased bus voltage

Improved full-load efficiency in industrial SMPS applications

High power density

관련된 링크들