STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247
- RS 제품 번호:
- 240-0611
- 제조사 부품 번호:
- STW75N65DM6-4
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 tray of 30 units)*
₩589,492.80
일시적 품절
- 2026년 3월 25일 부터 30 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tray* |
|---|---|---|
| 30 - 30 | ₩19,649.76 | ₩589,509.72 |
| 60 - 60 | ₩19,256.84 | ₩577,705.20 |
| 90 + | ₩18,679.68 | ₩560,373.48 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 240-0611
- 제조사 부품 번호:
- STW75N65DM6-4
- 제조업체:
- STMicroelectronics
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-247 | |
| Series | STW | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 480W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | UL | |
| Width | 15.8 mm | |
| Height | 5.1mm | |
| Length | 40.92mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-247 | ||
Series STW | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 480W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals UL | ||
Width 15.8 mm | ||
Height 5.1mm | ||
Length 40.92mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
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