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STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247 STWA32N65DM6AG

RS 제품 번호:: 240-0614
제조사 부품 번호:: STWA32N65DM6AG
제조업체:: STMicroelectronics

STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247 STWA32N65DM6AG

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Subtotal (1 unit)*

₩8,572.80

재고있음

71 개 단위 배송 준비 완료

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수량	한팩당
1 - 4	₩8,572.80
5 - 9	₩8,554.00
10 - 14	₩8,516.40
15 - 19	₩8,497.60
20 +	₩8,478.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 240-0614
제조사 부품 번호:: STWA32N65DM6AG
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	55A
	Maximum Drain Source Voltage Vds	30V
	Series	STW
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	45mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.5V
	Typical Gate Charge Qg @ Vgs	52.6nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	320W
	Maximum Operating Temperature	150°C
	Width	15.8 mm
	Height	5.1mm
	Length	40.92mm
	Standards/Approvals	UL
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 55A
	Maximum Drain Source Voltage Vds 30V
	Series STW
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 45mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.5V
	Typical Gate Charge Qg @ Vgs 52.6nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 320W
	Maximum Operating Temperature 150°C
	Width 15.8 mm
	Height 5.1mm
	Length 40.92mm
	Standards/Approvals UL
	Automotive Standard AEC-Q101

Datasheet - STWA32N65DM6AG

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

AEC-Q101 qualified

Fast-recovery body diode

Lower RDS(on) x area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely dv/dt ruggedness

Zener-protected

STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247 STWA32N65DM6AG

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