Vishay Type N-Channel MOSFET, 93.6 A, 60 V Depletion, 8-Pin PowerPAK SO-8
- RS 제품 번호:
- 239-8643
- 제조사 부품 번호:
- SIR188LDP-T1-RE3
- 제조업체:
- Vishay
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- RS 제품 번호:
- 239-8643
- 제조사 부품 번호:
- SIR188LDP-T1-RE3
- 제조업체:
- Vishay
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참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 93.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.75mΩ | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 93.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.75mΩ | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 60 V. This MOSFET used for primary side switch, motor drive switch and synchronous rectification.
Very low resistance
UIS tested
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