Vishay SIR680LDP N channel-Channel MOSFET, 130 A, 80 V Enhancement, 8-Pin PowerPAK SO-8 SIR680LDP-T1-BE3

N
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₩4,584.00

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Per Tape
1 - 9₩4,584.00
10 - 24₩2,974.00
25 - 99₩1,566.00
100 - 499₩1,520.00
500 +₩1,476.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
736-348
제조사 부품 번호:
SIR680LDP-T1-BE3
제조업체:
Vishay
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브랜드

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

130A

Maximum Drain Source Voltage Vds

80V

Series

SIR680LDP

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0028Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

40nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

5.15mm

Standards/Approvals

RoHS

Length

6.15mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET is designed for high-efficiency power management in various applications. It operates efficiently at 80 V and excels in synchronous rectification and motor drive switching tasks.

Features a trenchFET Gen IV technology for improved power efficiency

Displays very low RDS(on) of 0.0028 Ω at 10 V, ensuring minimal conduction losses

Rated for a continuous drain current of 130 A, making it suitable for demanding applications

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