Vishay N-Channel MOSFET, 130 A, 60 V Depletion, 8-Pin PowerPAK SO-8 SIR182LDP-T1-RE3
- RS 제품 번호:
- 239-8642
- 제조사 부품 번호:
- SIR182LDP-T1-RE3
- 제조업체:
- Vishay
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- RS 제품 번호:
- 239-8642
- 제조사 부품 번호:
- SIR182LDP-T1-RE3
- 제조업체:
- Vishay
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참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 130 A | |
| Maximum Drain Source Voltage (Vds) | 60 V | |
| Channel Mode | Depletion | |
| Pin Count | 8 | |
| Package Type | PowerPAK SO-8 | |
| Automotive Standard | AEC-Q101 | |
| Maximum Drain Source Resistance (Rds) | 0.00315 Ω | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 125 °C | |
| Maximum Power Dissipation (Pd) | 83 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 56 nC | |
| Width | 5.15 mm | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 130 A | ||
Maximum Drain Source Voltage (Vds) 60 V | ||
Channel Mode Depletion | ||
Pin Count 8 | ||
Package Type PowerPAK SO-8 | ||
Automotive Standard AEC-Q101 | ||
Maximum Drain Source Resistance (Rds) 0.00315 Ω | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 125 °C | ||
Maximum Power Dissipation (Pd) 83 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 56 nC | ||
Width 5.15 mm | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 60 V. This MOSFET used for power supply, motor drive control and synchronous rectification.
Very low resistance
UIS tested
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