Microchip TN5325 Type N-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92
- RS 제품 번호:
- 239-5617
- 제조사 부품 번호:
- TN5325K1-G
- 제조업체:
- Microchip
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대량 구매 할인 기용 가능
Subtotal (1 tray of 3000 units)*
₩2,284,200.00
일시적 품절
- 2026년 2월 10일 부터 배송
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수량 | 한팩당 | Per Tray* |
|---|---|---|
| 3000 - 12000 | ₩761.40 | ₩2,281,944.00 |
| 15000 + | ₩684.32 | ₩2,053,524.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 239-5617
- 제조사 부품 번호:
- TN5325K1-G
- 제조업체:
- Microchip
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | TN5325 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series TN5325 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip TN5325 series of low-threshold, enhancement-mode (normally-off) transistor utilize a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Low threshold of maximum 2V
High input impedance and high gain
Rise Time of 15 ns
Turn-off Delay Time of 25 ns
Fall Time of 25 ns
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