Microchip TN0606 Type N-Channel MOSFET, 3 A, 60 V Enhancement, 3-Pin TO-92 TN0606N3-G
- RS 제품 번호:
- 264-8910
- 제조사 부품 번호:
- TN0606N3-G
- 제조업체:
- Microchip
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩15,510.00
일시적 품절
- 2025년 12월 29일 부터 680 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 40 | ₩1,551.00 | ₩15,502.48 |
| 50 - 90 | ₩1,308.48 | ₩13,094.20 |
| 100 - 240 | ₩1,175.00 | ₩11,755.64 |
| 250 - 490 | ₩1,152.44 | ₩11,520.64 |
| 500 + | ₩1,128.00 | ₩11,281.88 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 264-8910
- 제조사 부품 번호:
- TN0606N3-G
- 제조업체:
- Microchip
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | TN0606 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series TN0606 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
2V maximum low threshold
High input impedance
100pF typical low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
관련된 링크들
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