제조사부품번호

Microchip TN5325 Type N-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92 TN5325K1-G

RS 제품 번호:: 239-5618
제조사 부품 번호:: TN5325K1-G
제조업체:: Microchip

Microchip TN5325 Type N-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92 TN5325K1-G

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 25 units)*

₩20,539.00

재고있음

2,100 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
25 - 25	₩821.56	₩20,548.40
50 - 75	₩802.76	₩20,059.60
100 - 225	₩782.08	₩19,570.80
250 - 975	₩763.28	₩19,100.80
1000 +	₩746.36	₩18,649.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 239-5618
제조사 부품 번호:: TN5325K1-G
제조업체:: Microchip

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Microchip
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10.3A
	Maximum Drain Source Voltage Vds	650V
	Series	TN5325
	Package Type	TO-92
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	8Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	140W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.8V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10.3A
	Maximum Drain Source Voltage Vds 650V
	Series TN5325
	Package Type TO-92
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 8Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 140W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.8V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - TN5325K1-G

The Microchip TN5325 series of low-threshold, enhancement-mode (normally-off) transistor utilize a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

Low threshold of maximum 2V

High input impedance and high gain

Rise Time of 15 ns

Turn-off Delay Time of 25 ns

Fall Time of 25 ns

Microchip TN5325 Type N-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92 TN5325K1-G

관련된 링크들