Vishay SiR N-Channel MOSFET, 171 A, 171 V, 8-Pin PowerPAK SO-8 SiRS700DP-T1-GE3
- RS 제품 번호:
- 239-5395
- 제조사 부품 번호:
- SiRS700DP-T1-GE3
- 제조업체:
- Vishay
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- RS 제품 번호:
- 239-5395
- 제조사 부품 번호:
- SiRS700DP-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Series | SiR | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 171 A | |
| Maximum Drain Source Voltage (Vds) | 171 V | |
| Pin Count | 8 | |
| Package Type | PowerPAK SO-8 | |
| Automotive Standard | No | |
| Length | 6 mm | |
| Maximum Drain Source Resistance (Rds) | 0.0035 Ω | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 132 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | RoHS | |
| Typical Gate Charge (Qg) @ Vgs | 86 nC | |
| Width | 5 mm | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Series SiR | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 171 A | ||
Maximum Drain Source Voltage (Vds) 171 V | ||
Pin Count 8 | ||
Package Type PowerPAK SO-8 | ||
Automotive Standard No | ||
Length 6 mm | ||
Maximum Drain Source Resistance (Rds) 0.0035 Ω | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 132 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals RoHS | ||
Typical Gate Charge (Qg) @ Vgs 86 nC | ||
Width 5 mm | ||
The Vishay TrenchFET N channel power MOSFET has drain current of 171 A. It is used in synchronous rectification, primary side switch, DC/DC converter and motor drive switch.
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
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