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Vishay SiR Type N-Channel MOSFET, 171 A, 171 V, 8-Pin PowerPAK SO-8 SiRS700DP-T1-GE3

RS 제품 번호:: 239-5396
제조사 부품 번호:: SiRS700DP-T1-GE3
제조업체:: Vishay

Vishay SiR Type N-Channel MOSFET, 171 A, 171 V, 8-Pin PowerPAK SO-8 SiRS700DP-T1-GE3

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RS 제품 번호:: 239-5396
제조사 부품 번호:: SiRS700DP-T1-GE3
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	171A
	Maximum Drain Source Voltage Vds	171V
	Series	SiR
	Package Type	PowerPAK SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0035Ω
	Maximum Power Dissipation Pd	132W
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	86nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	6mm
	Width	5 mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 171A
	Maximum Drain Source Voltage Vds 171V
	Series SiR
	Package Type PowerPAK SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0035Ω
	Maximum Power Dissipation Pd 132W
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 86nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 6mm
	Width 5 mm
	Automotive Standard No

Datasheet - SiRS700DP-T1-GE3

The Vishay TrenchFET N channel power MOSFET has drain current of 171 A. It is used in synchronous rectification, primary side switch, DC/DC converter and motor drive switch.

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

Vishay SiR Type N-Channel MOSFET, 171 A, 171 V, 8-Pin PowerPAK SO-8 SiRS700DP-T1-GE3

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