Infineon BSS123I N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223 BSS123IXTSA1

RS 제품 번호:: 225-0557
Distrelec 제품 번호:: 304-39-400
제조사 부품 번호:: BSS123IXTSA1
제조업체:: Infineon

Infineon BSS123I N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223 BSS123IXTSA1

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Subtotal (100 units, in packs of 100)*

₩15,200.00

추가로 2026년 10월 05일 부터 200 개 단위 배송
추가로 2026년 10월 12일 부터 3,200 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
100 - 100	₩152.00	₩15,240.00
200 - 200	₩148.00	₩14,840.00
300 - 300	₩144.00	₩14,500.00
400 - 400	₩142.00	₩14,120.00
500 +	₩138.00	₩13,740.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 225-0557
Distrelec 제품 번호:: 304-39-400
제조사 부품 번호:: BSS123IXTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	190mA
	Maximum Drain Source Voltage Vds	100V
	Package Type	SOT-223
	Series	BSS123I
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	10Ω
	Channel Mode	Depletion
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	0.5W
	Typical Gate Charge Qg @ Vgs	0.63nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	3.7mm
	Length	6.7mm
	Height	1.8mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 190mA
	Maximum Drain Source Voltage Vds 100V
	Package Type SOT-223
	Series BSS123I
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 10Ω
	Channel Mode Depletion
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 0.5W
	Typical Gate Charge Qg @ Vgs 0.63nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 3.7mm
	Length 6.7mm
	Height 1.8mm
	Standards/Approvals No
	Automotive Standard No

Datasheet-BSS123IXTSA1

Infineon BSS123I Series MOSFET, 100V Maximum Drain Source Voltage, 190mA Maximum Continuous Drain Current - BSS123IXTSA1

This MOSFET is a small-signal N-channel transistor designed for surface-mount applications, providing switching and amplification functions across a wide temperature range. It is intended for circuits requiring a depletion-mode device with modest current handling and moderate voltage capability, suitable for Compact assemblies where a SOT-223 package and conservative power handling are required.

Features and Benefits:

• 100 V drain-to-source rating delivers high-voltage switching capability
• 10 Ω maximum RDS(on) provides controlled on-state conduction
• 190 mA continuous drain current supports low-current loads
• 0.5 W power dissipation limits thermal stress in constrained layouts
• 0.63 nC typical gate charge enables modest switching energy demands
• ±20 V gate tolerance allows broad gate-drive flexibility

Applications

• Used for low-current high-voltage switching in control circuits
• Suitable for surface-mount power management on Compact boards
• Ideal for analogue signal attenuation or pull-down functions
• Can be used for level-shifting in mixed-voltage systems
• Used with driver stages needing depletion-mode characteristics

What ambient temperature range can it operate in?

It is specified to function correctly from -55°C up to 150°C.

What package should designers plan for when laying out the board?

The device comes in a SOT-223 surface-mount package with four pins for PCB footprint planning.

How does its gate charge affect switching performance?

A typical gate charge of 0.63 nC reduces required gate-drive energy and influences transition speed in switching topologies.

What limits the maximum continuous current in applications?

The specified continuous drain current of 190 mA defines thermal and conduction limits for sustained operation.

Is this intended as an automotive-grade component?

It is not classified to automotive standards and should not be assumed to meet automotive qualification.