Infineon CoolMOS Type N-Channel MOSFET, 25 A, 700 V, 3-Pin TO-247 IPW65R090CFD7XKSA1
- RS 제품 번호:
- 236-3671
- 제조사 부품 번호:
- IPW65R090CFD7XKSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 tube of 240 units)*
₩1,097,769.60
일시적 품절
- 2026년 5월 22일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 240 - 240 | ₩4,574.04 | ₩1,097,634.24 |
| 480 - 480 | ₩4,397.32 | ₩1,055,401.92 |
| 720 + | ₩4,265.72 | ₩1,023,772.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 236-3671
- 제조사 부품 번호:
- IPW65R090CFD7XKSA1
- 제조업체:
- Infineon
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 127W | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.21 mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 127W | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 5.21 mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 25 A.
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Outstanding light-load efficiency in industrial SMPS applications
Improved full-load efficiency in industrial SMPS applications
Price competitiveness compared to alternative offerings in the market
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