Infineon CoolMOS N-Channel MOSFET, 19 A, 700 V, 3-Pin TO-247 IPW65R125CFD7XKSA1
- RS 제품 번호:
- 236-3676
- 제조사 부품 번호:
- IPW65R125CFD7XKSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (2 units, in packs of 2)*
₩17,220.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩8,610.00 | ₩17,220.00 |
| 10 - 98 | ₩8,350.00 | ₩16,700.00 |
| 100 - 248 | ₩8,090.00 | ₩16,180.00 |
| 250 - 498 | ₩7,860.00 | ₩15,720.00 |
| 500 + | ₩7,610.00 | ₩15,220.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 236-3676
- 제조사 부품 번호:
- IPW65R125CFD7XKSA1
- 제조업체:
- Infineon
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 98W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.5mm | |
| Standards/Approvals | No | |
| Length | 16.3mm | |
| Width | 5.3mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 98W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 21.5mm | ||
Standards/Approvals No | ||
Length 16.3mm | ||
Width 5.3mm | ||
Automotive Standard No | ||
The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 15 A.
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Outstanding light-load efficiency in industrial SMPS applications
Improved full-load efficiency in industrial SMPS applications
Price competitiveness compared to alternative offerings in the market
관련된 링크들
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